Path:OKDatasheet > Datasheet Semiconductor > ON Semiconductor Datasheet > MGY20N120D
MGY20N120D especificación: Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
Path:OKDatasheet > Datasheet Semiconductor > ON Semiconductor Datasheet > MGY20N120D
MGY20N120D especificación: Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
Fabricante : ON Semiconductor
Embalaje : TO-3PBL
Pins : 3
Temperatura : Min 0 °C | Max 0 °C
Tamaño : 188 KB
Aplicación : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel