Path:OKDatasheet > Datasheet Semiconductor > ON Semiconductor Datasheet > MJD122-1
MJD122-1 especificación: NPN transistor for high DC current gain, 100V, 8A
MJD122-1 similares
- MJD112-1
- Complementary Darlington Power Transistors
- MJD112RL
- Complementary Darlington Power Transistors
- MJD112T4
- Complementary Darlington Power Transistors
- MJD117
- Complementary Darlington Power Transistors
- MJD122
- Complementary Darlington Power Transistors
- MJD122
- NPN transistor for high DC current gain, 100V, 8A
- MJD122-1
- NPN transistor for high DC current gain, 100V, 8A
- MJD122-1
- NPN transistor for high DC current gain, 100V, 8A
MJD122-1 Datasheet y Espec
Fabricante : ON Semiconductor
Embalaje : TO-251
Pins : 3
Temperatura : Min -65 °C | Max 150 °C
Tamaño : 150 KB
Aplicación : NPN transistor for high DC current gain, 100V, 8A
MJD122-1 PDF Download