Path:OKDatasheet > Datasheet Semiconductor > ON Semiconductor Datasheet > MJE18002D2
MJE18002D2 especificación: High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
Path:OKDatasheet > Datasheet Semiconductor > ON Semiconductor Datasheet > MJE18002D2
MJE18002D2 especificación: High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
Fabricante : ON Semiconductor
Embalaje : TO-220
Pins : 3
Temperatura : Min 0 °C | Max 0 °C
Tamaño : 167 KB
Aplicación : High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network