1N5381B especificación: Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 130V, Izt =10mA

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1N5381B Datasheet y Espec

Fabricante : PanJit

Embalaje : DO-201AE

Pins : 2

Temperatura : Min -55 °C | Max 150 °C

Tamaño : 336 KB

Aplicación : Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 130V, Izt =10mA