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01 3.0SMCJ58C 1N4148WS BA157 SA16C BZT52-C2V4S P4SMAJ16C SD540YS 15KP200C SA22C BZX84C20W P6KE13 PG4934 1.5SMCJ15 P4KE62 P4SMAJ75A SB820CT 1SMC5357 1N4007S 1N5946B P4KE11A P6SMBJ15A P4KE440C SK39 RS1J TSP220C SB25100FCT 1N5387B

PanJit Catálogo de datos-13

Parte NoFabricanteAplicación
P4KE300A PanJitGlass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 256.00V, Vbr(min/max) = 285.00/315.00V, It = 1 mA.
P6KE22 PanJitGlass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 17.80V, Vbr(min/max) = 19.80/24.20V, It = 1 mA.
CP1001 PanJitSingle-phase silicon bridge. Max recurrent peak reverse voltage 100V. Max average rectified output 10.0A(at Tc=50), 3.0A(at Tc=100), 3.0(at Ta=50).
3.0SMCJ58C PanJitSurface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 58 V. Vbr(min/max) = 64.4/81.6 V @ It. Ir = 5 uA @ Vrwm. Vc = 103 V @ Ipp = 39.2 A.
1N4148WS PanJitSurface mount switching diode. Voltage 75V. Power 200mW. Peak reverse voltage 100V.
BA157 PanJitFast switching plastic rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified current 1.0 A.
SA16C PanJitGlass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 16.00V, Vbr(min/max) = 17.80/22.60V, It = 1 mA.
BZT52-C2V4S PanJitSurface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 2.4 V
P4SMAJ16C PanJitSurfase mount transient voltage suppressor. Reverse stand-off voltage 16 V. Breakdown voltage(min/max) 17.8/22.6 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 28.8 V. Peak pulse current 13.8 A.
SD540YS PanJitSurfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward rectified current at Tc = 75degC 5 A.
15KP200C PanJitGlass passivated junction transient voltage suppressor. Vrwm = 200 V. Vbr(min/max) = 220/282.0 V @ It = 1.0 mA. Ir = 5 uA. Vc = 358 V @ Ipp = 42 A.
SA22C PanJitGlass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 22.00V, Vbr(min/max) = 24.40/30.90V, It = 1 mA.
BZX84C20W PanJitSurface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 20 V
P6KE13 PanJitGlass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 10.50V, Vbr(min/max) = 11.70/14.30V, It = 1 mA.
PG4934 PanJitGlass passivated junction fast switching rectifier. Max recurrent peak reverse voltage 100 A. Max average forward rectified current 9.5mm lead length at Ta = 55degC 1.0 A.
1.5SMCJ15 PanJitSurfase mount transient voltage suppressor. 1500W peak power pulse. Vrwm = 15V; Vbr(min/max) = 16.7/21.1V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 26.9V @ Ipp = 55.8A
P4KE62 PanJitGlass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 50.20V, Vbr(min/max) = 55.80/68.20V, It = 1mA.
P4SMAJ75A PanJitSurfase mount transient voltage suppressor. 400W. Reverse stand-off voltage 75 V. Breakdown voltage(min/max) 83.3/95.8 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 121 V. Peak pulse current 3.3 A.
SB820CT PanJitSchottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward rectified current at Tc = 100degC 8 A.
1SMC5357 PanJitSurface mount silicon zener diode. Power 5.0 Watts. Nominal zener voltage Vz = 20 V. Test current Izt = 65 mA.
1N4007S PanJitPlastic silicon rectifier. Max recurrent peak reverse voltage 1000 V. Max average forward rectified current 1.0 A.
1N5946B PanJitGlass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 75V. Test current Izt = 5 mA.
P4KE11A PanJitGlass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 9.40V, Vbr(min/max) = 10.50/11.60V, It = 1mA.
P6SMBJ15A PanJitSurfase mount transient voltage suppressor. 600W. Vrwm = 15 V. Vbr(min/max) = 16.7/19.2 V. It = 1.0 mA. Ir = 5 uA. Vc = 24.4 V. Ipp = 24.0 A.
P4KE440C PanJitGlass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 356.00V, Vbr(min/max) = 396.00/484.00V, It = 1 mA.
SK39 PanJitSurfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 90 V. Max average forward rectified current at Tl = 75degC 3.0 A.
RS1J PanJitSurfase mount fast switching rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current at Tl = 90degC 1.0 A.
TSP220C PanJitAxial lead bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 220V. Breakover voltage 300V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA.
SB25100FCT PanJitIsolation Schottky barrier rectifier. Max recurrent peak reverse voltage 100.0 V. Max average forward rectified current at Tc = 90degC 25 A.
1N5387B PanJitGlass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 190V, Izt = 5.0mA

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