| Parte No | Fabricante | Aplicación |
|---|
| P6KE150 | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 121.00V, Vbr(min/max) = 135.00/165.00V, It = 1 mA. |
| GBJ10A | PanJit | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 50V. Max average forward rectified output current 10.0 A(Tc=100degC), 8.0A(Ta=45degC).. |
| ER804 | PanJit | Superfast recovery rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified current 8.0 A. |
| P6SMBJ85CA | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 85 V. Vbr(min/max) = 94.4/108.2 V. It = 1.0 mA. Ir = 5 uA. Vc = 137 V. Ipp = 4.4 A. |
| SB10100 | PanJit | Schottky barrier rectifier. Max recurrent peak reverse voltage 100.0 V. Max average forward rectified current at Tc = 90degC 10 A. |
| P4SMAJ11CA | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 11 V. Breakdown voltage(min/max) 12.21/14.0 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 18.2 V. Peak pulse current 22.0 A. |
| 15KP58 | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 58 V. Vbr(min/max) = 64.4/81.6 V @ It = 5.0 mA. Ir = 10 uA. Vc = 103 V @ Ipp = 144 A. |
| TSP140C | PanJit | Axial lead bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 140V. Breakover voltage 180V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. |
| GBU4D | PanJit | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified output current at Tc=100degC 4.0 A, at Ta=40degC 3.0 A. |
| TSP058C | PanJit | Surfase mount bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 58V. Breakover voltage 77V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. |
| P4KE18C | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 14.50V, Vbr(min/max) = 16.20/19.80V, It = 1 mA. |
| P4KE350A | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 300.00V, Vbr(min/max) = 332.00/368.00V, It = 1 mA. |
| ER2D | PanJit | Surface mount superfast rectifier. Max recurrent peak reverse voltage 200V. Max average forward rectified current 2.0 A. |
| 1SMB5954 | PanJit | Surface mount silicon zener diode. Power 1.5 Watts. Nominal zener voltage Vz = 160 V. Test current Izt = 2.3 mA |
| SA12CA | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 12.00V, Vbr(min/max) = 13.30/15.30V, It = 1 mA. |
| 15KP200CA | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 200 V. Vbr(min/max) = 220/256.0 V @ It = 1.0 mA. Ir = 5 uA. Vc = 324 V @ Ipp = 46 A. |
| 1.5SMCJ14 | PanJit | Surfase mount transient voltage suppressor. 1500W peak power pulse. Vrwm = 14V; Vbr(min/max) = 15.6/19.8V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 25.8V @ Ipp = 58.1A |
| P6KE8.2CA | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 7.02V, Vbr(min/max) = 7.79/8.61V, It = 10 mA. |
| MMBZ5256B | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 30 V @ Izt. 500 mWatts zener diode. |
| P4SMAJ60CA | PanJit | Surfase mount transient voltage suppressor. 400W. Reverse stand-off voltage 60 V. Breakdown voltage(min/max) 66.7/76.7 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 96.8 V. Peak pulse current 4.1 A. |
| P6SMBJ200C | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 200 V. Vbr(min/max) = 220/282.0 V. It = 1.0 mA. Ir = 5 uA. Vc = 358 V. Ipp = 1.7 A. |
| 3.0SMCJ30C | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 30 V. Vbr(max/min) = 33.3/42.2 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 53.5 V @ Ipp = 56.0 A. |
| P4SMAJ6.0 | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 6.0 V. Breakdown voltage(min/max) 6.67/8.45 V. Test current 10 mA. Reverse leakage 800 uA. Max clamp voltage 11.4 V. Peak pulse current 35.1 A. |
| SA75CA | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 75.00V, Vbr(min/max) = 83.30/95.80V, It = 1 mA. |
| 1SMB3EZ13 | PanJit | Surface mount silicon zener diode. Power 3.0 Watts. Nominal zener voltage Vz = 13 V. Test current Izt = 58 mA |
| SA26 | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 26.00V, Vbr(min/max) = 28.90/36.60V, It = 1 mA. |
| BAW56W | PanJit | Surface mount switching diode. Power 200 mW. Reverse voltage 75 V. Rectified current 150 mA. |
| 1SMB5943 | PanJit | Surface mount silicon zener diode. Power 1.5 Watts. Nominal zener voltage Vz = 56 V. Test current Izt = 6.7 mA |
| MMSZ5231BS | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 5.1 V @ Izt. 200 mWatts zener diode. |
| 3KP85A | PanJit | Glass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 85.00 V. Vbr = 94.40 V (min), 108.20 V (max). It = 1 mA. |
