BSN20W especificación: N-channel enhancement mode vertical D-MOS transistor. Drain-source voltage 50 V. Drain current(DC) 80 mA.

BSN20W similares

BSN20
- N-channel enhancement mode vertical D-MOS transistor
BSN20
- N-channel enhancement mode vertical D-MOS transistor.
BSN205
- 200 V, N-channel enhancement mode vertical D-MOS transistor
BSN205A
- 200 V, N-channel enhancement mode vertical D-MOS transistor
BSN20W
- N-channel enhancement mode vertical D-MOS transistor. Drain-source voltage 50 V. Drain current(DC) 80 mA.
BSN20W
- N-channel enhancement mode vertical D-MOS transistor. Drain-source voltage 50 V. Drain current(DC) 80 mA.
BSN254
- N-channel enhancement mode vertical D-MOS transistor.
BSN254
- N-channel enhancement mode vertical D-MOS transistors

BSN20W Datasheet y Espec

Fabricante : Philips

Embalaje : SOT323

Pins : 3

Temperatura : Min -65 °C | Max 150 °C

Tamaño : 0 KB

Aplicación : N-channel enhancement mode vertical D-MOS transistor. Drain-source voltage 50 V. Drain current(DC) 80 mA.