Path:OKDatasheet > Datasheet Semiconductor > Philips Datasheet > PHB112N06T
PHB112N06T especificación: 55 V, N-channel enhancement mode field-effect transistor
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PHB112N06T Datasheet y Espec
Fabricante : Philips
Embalaje : SOT
Pins : 3
Temperatura : Min -55 °C | Max 175 °C
Tamaño : 288 KB
Aplicación : 55 V, N-channel enhancement mode field-effect transistor
PHB112N06T PDF Download