Path:OKDatasheet > Datasheet Semiconductor > Philips Datasheet > PHB2N60E
PHB2N60E especificación: 600 V, power MOS transistor avalanche energy rated
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PHB2N60E Datasheet y Espec
Fabricante : Philips
Embalaje : SOT
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 83 KB
Aplicación : 600 V, power MOS transistor avalanche energy rated
PHB2N60E PDF Download