Path:OKDatasheet > Datasheet Semiconductor > Philips Datasheet > PHD2N50E
PHD2N50E especificación: PowerMOS transistor. Avalanche energy rated.
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PHD2N50E Datasheet y Espec
Fabricante : Philips
Embalaje : SOT428
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 102 KB
Aplicación : PowerMOS transistor. Avalanche energy rated.
PHD2N50E PDF Download