F1012 especificación: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1012 similares

F1012
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F1014
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F1015
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F1016
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F1018
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F1019
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F1012 Datasheet y Espec

Fabricante : Polyfet RF

Embalaje :

Pins : 4

Temperatura : Min -65 °C | Max 150 °C

Tamaño : 41 KB

Aplicación : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor