F1020 especificación: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1020 similares

F1020
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1021
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1022
- 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1027
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1020 Datasheet y Espec

Fabricante : Polyfet RF

Embalaje :

Pins : 4

Temperatura : Min -65 °C | Max 150 °C

Tamaño : 43 KB

Aplicación : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor