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F1107 similares

  • F1107
    • 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1108
    • 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1108
    • 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1107 Datasheet y Espec

Fabricante : Polyfet RF 

Embalaje :  

Pins : 4 

Temperatura : Min -65 °C | Max 150 °C

Tamaño : 42 KB

Aplicación : 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F1107 PDF Download