F1116 especificación: 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1116 similares

F1116
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1116 Datasheet y Espec

Fabricante : Polyfet RF

Embalaje :

Pins : 4

Temperatura : Min -65 °C | Max 150 °C

Tamaño : 46 KB

Aplicación : 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor