F1209 especificación: 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

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- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1209 Datasheet y Espec

Fabricante : Polyfet RF

Embalaje :

Pins : 8

Temperatura : Min -65 °C | Max 150 °C

Tamaño : 39 KB

Aplicación : 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor