F1210 especificación: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1210 similares

F1210
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1214
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1210 Datasheet y Espec

Fabricante : Polyfet RF

Embalaje :

Pins : 4

Temperatura : Min -65 °C | Max 150 °C

Tamaño : 40 KB

Aplicación : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor