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F1221 similares

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  • F1221
    • 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1222
    • 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1221 Datasheet y Espec

Fabricante : Polyfet RF 

Embalaje :  

Pins : 2 

Temperatura : Min -65 °C | Max 150 °C

Tamaño : 40 KB

Aplicación : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F1221 PDF Download