F1260 especificación: "60 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor"

F1260 similares

F1260
- "60 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor"

F1260 Datasheet y Espec

Fabricante : Polyfet RF

Embalaje :

Pins : 6

Temperatura : Min -65 °C | Max 150 °C

Tamaño : 41 KB

Aplicación : "60 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor"