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F2001 similares

  • F2001
    • 2.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2002
    • 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2004
    • 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2001 Datasheet y Espec

Fabricante : Polyfet RF 

Embalaje :  

Pins : 2 

Temperatura : Min -65 °C | Max 150 °C

Tamaño : 40 KB

Aplicación : 2.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F2001 PDF Download