F2201 especificación: 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2201 similares

F2201
- 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2202
- 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2201 Datasheet y Espec

Fabricante : Polyfet RF

Embalaje :

Pins : 2

Temperatura : Min -65 °C | Max 150 °C

Tamaño : 38 KB

Aplicación : 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor