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F2211 similares

  • F2211
    • 15 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2212
    • 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2213
    • 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2211 Datasheet y Espec

Fabricante : Polyfet RF 

Embalaje :  

Pins : 4 

Temperatura : Min -65 °C | Max 150 °C

Tamaño : 38 KB

Aplicación : 15 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F2211 PDF Download