F5001 especificación: 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F5001 similares

F5001
- 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F5001 Datasheet y Espec

Fabricante : Polyfet RF

Embalaje :

Pins : 2

Temperatura : Min -65 °C | Max 150 °C

Tamaño : 40 KB

Aplicación : 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor