Path:OKDatasheet > Datasheet Semiconductor > Polyfet RF Datasheet > L8711P
L8711P especificación: 7 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8711P similares
- L8711P
- 7 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8711P Datasheet y Espec
Fabricante : Polyfet RF
Embalaje : SO-8
Pins : 8
Temperatura : Min -65 °C | Max 150 °C
Tamaño : 43 KB
Aplicación : 7 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8711P PDF Download