Path:OKDatasheet > Datasheet Semiconductor > Polyfet RF Datasheet > L8821P
L8821P especificación: 5 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8821P similares
- L8821P
- 5 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8821P Datasheet y Espec
Fabricante : Polyfet RF
Embalaje : SO-8
Pins : 8
Temperatura : Min -65 °C | Max 150 °C
Tamaño : 43 KB
Aplicación : 5 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8821P PDF Download