Path:OKDatasheet > Datasheet Semiconductor > Polyfet RF Datasheet > LQ801
LQ801 especificación: 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
LQ801 similares
- LQ801
- 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
LQ801 Datasheet y Espec
Fabricante : Polyfet RF
Embalaje :
Pins : 4
Temperatura : Min -65 °C | Max 150 °C
Tamaño : 38 KB
Aplicación : 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
LQ801 PDF Download