Path:OKDatasheet > Datasheet Semiconductor > Polyfet RF Datasheet > LQ821
LQ821 especificación: 20 Watt, silicon gate enhancement mode RF power LDMOS transistor
LQ821 similares
- LQ821
- 20 Watt, silicon gate enhancement mode RF power LDMOS transistor
LQ821 Datasheet y Espec
Fabricante : Polyfet RF
Embalaje :
Pins : 4
Temperatura : Min -65 °C | Max 150 °C
Tamaño : 38 KB
Aplicación : 20 Watt, silicon gate enhancement mode RF power LDMOS transistor
LQ821 PDF Download