P281 especificación: 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P281 similares

P281
- 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P281 Datasheet y Espec

Fabricante : Polyfet RF

Embalaje : SO-8

Pins : 8

Temperatura : Min -65 °C | Max 150 °C

Tamaño : 41 KB

Aplicación : 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor