Path:OKDatasheet > Datasheet Semiconductor > Shanghai Sunrise Datasheet > 1N5407G
1N5407G especificación: Glass passivated junction rerctifier. Max repetitive peak reverse voltage 800 V. Max average forward rectified current 3.0 A.
Path:OKDatasheet > Datasheet Semiconductor > Shanghai Sunrise Datasheet > 1N5407G
1N5407G especificación: Glass passivated junction rerctifier. Max repetitive peak reverse voltage 800 V. Max average forward rectified current 3.0 A.
Fabricante : Shanghai Sunrise
Embalaje :
Pins : 2
Temperatura : Min -65 °C | Max 150 °C
Tamaño : 17 KB
Aplicación : Glass passivated junction rerctifier. Max repetitive peak reverse voltage 800 V. Max average forward rectified current 3.0 A.