Path:OKDatasheet > Datasheet Semiconductor > Shanghai Sunrise Datasheet > RC30S10G
RC30S10G especificación: Silicon GPP cell rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward current 30 A.
Path:OKDatasheet > Datasheet Semiconductor > Shanghai Sunrise Datasheet > RC30S10G
RC30S10G especificación: Silicon GPP cell rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward current 30 A.
Fabricante : Shanghai Sunrise
Embalaje :
Pins : 0
Temperatura : Min -50 °C | Max 150 °C
Tamaño : 18 KB
Aplicación : Silicon GPP cell rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward current 30 A.