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BULD25DR similares

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  • BULD25DR
    • 600 V, NPN silicon transistor with integrated diode
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BULD25DR Datasheet y Espec

Fabricante : Transys 

Embalaje :  

Pins : 8 

Temperatura : Min -65 °C | Max 150 °C

Tamaño : 741 KB

Aplicación : 600 V, NPN silicon transistor with integrated diode 

BULD25DR PDF Download