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2N4123 especificación: General purpose transistor. Collector-emitter voltage Vceo = 30V. Collector-base voltage Vcbo = 40V. Collector dissipation Pc(max) = 625mW.
2N4123 similares
- 2N4123
- General purpose transistor. Collector-emitter voltage Vceo = 30V. Collector-base voltage Vcbo = 40V. Collector dissipation Pc(max) = 625mW.
- 2N4124
- General purpose transistor. Collector-emitter voltage Vceo = 25V. Collector-base voltage Vcbo = 30V. Collector dissipation Pc(max) = 625mW.
- 2N4125
- Amplifier transistor. Collector-emitter voltage Vceo = -30V. Collector-base voltage Vcbo = -30V. Collector dissipation Pc(max) = 625mW.
- 2N4126
- Amplifier transistor. Collector-emitter voltage Vceo = -25V. Collector-base voltage Vcbo = -25V. Collector dissipation Pc(max) = 625mW.
2N4123 Datasheet y Espec
Fabricante : Usha
Embalaje :
Pins : 3
Temperatura : Min 0 °C | Max 150 °C
Tamaño : 49 KB
Aplicación : General purpose transistor. Collector-emitter voltage Vceo = 30V. Collector-base voltage Vcbo = 40V. Collector dissipation Pc(max) = 625mW.
2N4123 PDF Download