Path:OKDatasheet > Datasheet Semiconductor > Usha Datasheet > 2N5551
2N5551 especificación: Amplifier transistor. Collector-emitter voltage Vceo = 160V. Collector-base voltage Vcbo = 180V. Collector dissipation Pc(max) = 625mW.
Path:OKDatasheet > Datasheet Semiconductor > Usha Datasheet > 2N5551
2N5551 especificación: Amplifier transistor. Collector-emitter voltage Vceo = 160V. Collector-base voltage Vcbo = 180V. Collector dissipation Pc(max) = 625mW.
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Aplicación : Amplifier transistor. Collector-emitter voltage Vceo = 160V. Collector-base voltage Vcbo = 180V. Collector dissipation Pc(max) = 625mW.