Path:OKDatasheet > Datasheet Semiconductor > Usha Datasheet > 2N6517
2N6517 especificación: High voltage transistor. Collector-emitter voltage Vceo = 350V. Collector-base voltage Vcbo = 350V. Collector dissipation Pc(max) = 625mW.
Path:OKDatasheet > Datasheet Semiconductor > Usha Datasheet > 2N6517
2N6517 especificación: High voltage transistor. Collector-emitter voltage Vceo = 350V. Collector-base voltage Vcbo = 350V. Collector dissipation Pc(max) = 625mW.
Fabricante : Usha
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Aplicación : High voltage transistor. Collector-emitter voltage Vceo = 350V. Collector-base voltage Vcbo = 350V. Collector dissipation Pc(max) = 625mW.