Path:OKDatasheet > Datasheet Semiconductor > Usha Datasheet > 2SD313
2SD313 especificación: NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain 40 @ Ic = 2A. Pd = 30W.
Path:OKDatasheet > Datasheet Semiconductor > Usha Datasheet > 2SD313
2SD313 especificación: NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain 40 @ Ic = 2A. Pd = 30W.
Fabricante : Usha
Embalaje : TO-220
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 50 KB
Aplicación : NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain 40 @ Ic = 2A. Pd = 30W.