Path:OKDatasheet > Datasheet Semiconductor > Usha Datasheet > 2SD880Y
2SD880Y especificación: NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain 20 @ Ic = 3A. Pd = 30W.
Path:OKDatasheet > Datasheet Semiconductor > Usha Datasheet > 2SD880Y
2SD880Y especificación: NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain 20 @ Ic = 3A. Pd = 30W.
Fabricante : Usha
Embalaje : TO-220
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Tamaño : 51 KB
Aplicación : NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain 20 @ Ic = 3A. Pd = 30W.