Path:OKDatasheet > Datasheet Semiconductor > Usha Datasheet > MJE3055T
MJE3055T especificación: NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W.
Fabricante : Usha
Embalaje : TO-220
Pins : 3
Temperatura : Min -65 °C | Max 150 °C
Tamaño : 52 KB
Aplicación : NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W.