1N5407 especificación: Silicon rectifier. Max recurrent peak reverse voltage 800V. Max RMS voltage 560V. Max DC blocking voltage 800V. Current 3.0A

1N5407 similares

1N5404
- Silicon rectifier. Max recurrent peak reverse voltage 400V. Max RMS voltage 280V. Max DC blocking voltage 400V. Current 3.0A
1N5400
- Silicon rectifier. Max recurrent peak reverse voltage 50V. Max RMS voltage 35V. Max DC blocking voltage 50V. Current 3.0A
1N5408
- Silicon rectifier. Max recurrent peak reverse voltage 1000V. Max RMS voltage 700V. Max DC blocking voltage 1000V. Current 3.0A
1N5406
- Silicon rectifier. Max recurrent peak reverse voltage 600V. Max RMS voltage 420V. Max DC blocking voltage 600V. Current 3.0A
1N5401
- Silicon rectifier. Max recurrent peak reverse voltage 100V. Max RMS voltage 70V. Max DC blocking voltage 100V. Current 3.0A
1N5407
- Silicon rectifier. Max recurrent peak reverse voltage 800V. Max RMS voltage 560V. Max DC blocking voltage 800V. Current 3.0A
1N5402
- Silicon rectifier. Max recurrent peak reverse voltage 200V. Max RMS voltage 140V. Max DC blocking voltage 200V. Current 3.0A

1N5407 Datasheet y Espec

Fabricante : WingShing

Embalaje : DO-27

Pins : 2

Temperatura : Min -65 °C | Max 175 °C

Tamaño : 305 KB

Aplicación : Silicon rectifier. Max recurrent peak reverse voltage 800V. Max RMS voltage 560V. Max DC blocking voltage 800V. Current 3.0A