Path:OKDatasheet > Datasheet Semiconductor > WingShing Datasheet > BU208D
BU208D especificación: NPN silicon diffused power transistor. Collector-base voltage 1500V. Collector-emitter voltage 600V. Emitter-base voltage 5V
Path:OKDatasheet > Datasheet Semiconductor > WingShing Datasheet > BU208D
BU208D especificación: NPN silicon diffused power transistor. Collector-base voltage 1500V. Collector-emitter voltage 600V. Emitter-base voltage 5V
Fabricante : WingShing
Embalaje : TO-3
Pins : 3
Temperatura : Min 0 °C | Max 0 °C
Tamaño : 211 KB
Aplicación : NPN silicon diffused power transistor. Collector-base voltage 1500V. Collector-emitter voltage 600V. Emitter-base voltage 5V