Path:OKDatasheet > Datasheet Semiconductor > WingShing Datasheet > BUT11
BUT11 especificación: NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
Path:OKDatasheet > Datasheet Semiconductor > WingShing Datasheet > BUT11
BUT11 especificación: NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
Fabricante : WingShing
Embalaje : TO-220
Pins : 3
Temperatura : Min 0 °C | Max 0 °C
Tamaño : 24 KB
Aplicación : NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.