MJE13003 especificación: NPN silicon transistor. V(BR)cbo=700V, V(BR)ceo=400V, V(BR)ebo=9V

MJE13003 similares

MJE13002A
- Silicon NPN triple diffused MESA type. Electronic transformers, power switching circuit. Vcbo=600V, Vceo=400V, Vebo=9V
MJE13003
- NPN silicon transistor. V(BR)cbo=700V, V(BR)ceo=400V, V(BR)ebo=9V
MJE13005B
- NPN silicon transistor. Electronic transformers, power switching circuit Vcbo=700V, Vceo=400V, Vebo=9V

MJE13003 Datasheet y Espec

Fabricante : WingShing

Embalaje : TO-126

Pins : 3

Temperatura : Min 0 °C | Max 0 °C

Tamaño : 29 KB

Aplicación : NPN silicon transistor. V(BR)cbo=700V, V(BR)ceo=400V, V(BR)ebo=9V