S8550LT1 especificación: High voltage epitaxial silicon transistor(PNP). Power dissipation 225mW, Collector current 0.5A. Collector-base voltage 40V

S8550LT1 similares

S8550
- Transistor(PNP). Power dissipation 0.625W, Collector current -0.5A. Collector-base voltage -40V
S8550LT1
- High voltage epitaxial silicon transistor(PNP). Power dissipation 225mW, Collector current 0.5A. Collector-base voltage 40V

S8550LT1 Datasheet y Espec

Fabricante : WingShing

Embalaje : SOT-23

Pins : 3

Temperatura : Min 0 °C | Max 0 °C

Tamaño : 93 KB

Aplicación : High voltage epitaxial silicon transistor(PNP). Power dissipation 225mW, Collector current 0.5A. Collector-base voltage 40V