Path:OKDatasheet > Datasheet Semiconductor > WingShing Datasheet > TIP142
TIP142 especificación: NPN epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage 100V. Collector-emitter voltage 100V. Emitter-base voltage 5V
TIP142 similares
- TIP146
- PNP epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage -80V. Collector-emitter voltage -80V. Emitter-base voltage -5V
- TIP141
- NPN epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage 80V. Collector-emitter voltage 80V. Emitter-base voltage 5V
- TIP142
- NPN epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage 100V. Collector-emitter voltage 100V. Emitter-base voltage 5V
- TIP145
- PNP epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage -60V. Collector-emitter voltage -60V. Emitter-base voltage -5V
- TIP140
- NPN epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage 60V. Collector-emitter voltage 60V. Emitter-base voltage 5V
- TIP137
- PNP silicon darlington transistor. Switching regulators. PWM inverters. Solenoid and relay drivers.
- TIP127
- PNP silicon darlington transistor. Switching regulators. PWM inverters. Solenoid and relay drivers.
- TIP147
- PNP epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage -100V. Collector-emitter voltage -100V. Emitter-base voltage -5V
TIP142 Datasheet y Espec
Fabricante : WingShing
Embalaje :
Pins : 3
Temperatura : Min 0 °C | Max 0 °C
Tamaño : 26 KB
Aplicación : NPN epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage 100V. Collector-emitter voltage 100V. Emitter-base voltage 5V
TIP142 PDF Download