WMBT3906 especificación: PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A

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WMBT3906 Datasheet y Espec

Fabricante : WingShing

Embalaje : SOT-89

Pins : 3

Temperatura : Min 0 °C | Max 0 °C

Tamaño : 72 KB

Aplicación : PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A