Path:OKDatasheet > Datasheet Semiconductor > Hamamatsu Datasheet > G1961
G1961 especificación: Active area size1.1x1.1mm; reverse voltage5V; GaP photodiode. Schottky type. For analytical instruments, UV detection
Path:OKDatasheet > Datasheet Semiconductor > Hamamatsu Datasheet > G1961
G1961 especificación: Active area size1.1x1.1mm; reverse voltage5V; GaP photodiode. Schottky type. For analytical instruments, UV detection
Fabricante : Hamamatsu
Embalaje : TO-18
Pins : 2
Temperatura : Min -30 °C | Max 80 °C
Tamaño : 173 KB
Aplicación : Active area size1.1x1.1mm; reverse voltage5V; GaP photodiode. Schottky type. For analytical instruments, UV detection