Path:OKDatasheet > Datasheet Semiconductor > Hamamatsu Datasheet > G1962
G1962 especificación: Active area size2.3x2.3mm; reverse voltage5V; GaP photodiode. Schottky type. For analytical instruments, UV detection
Path:OKDatasheet > Datasheet Semiconductor > Hamamatsu Datasheet > G1962
G1962 especificación: Active area size2.3x2.3mm; reverse voltage5V; GaP photodiode. Schottky type. For analytical instruments, UV detection
Fabricante : Hamamatsu
Embalaje : TO-5
Pins : 2
Temperatura : Min -30 °C | Max 80 °C
Tamaño : 173 KB
Aplicación : Active area size2.3x2.3mm; reverse voltage5V; GaP photodiode. Schottky type. For analytical instruments, UV detection