HLB123I especificación: Emitter to base voltage8V; NPN epitaxial planar transistor

HLB123I similares

HLB120A
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
HLB121I
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
HLB122I
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
HLB122J
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
HLB123I
- Emitter to base voltage8V; NPN epitaxial planar transistor
HLB123T
- Emitter to base voltage8V; NPN epitaxial planar transistor
HLB124E
- Emitter to base voltage8V; NPN epitaxial planar transistor for high voltage, high speed switching inductive circuit and amplifier applications
HLB125E
- Emitter to base voltage9V; NPN epitaxial planar transistor for light applications and low switch-mode power suppies

HLB123I Datasheet y Espec

Fabricante : Hi Sincerity

Embalaje : TO-251

Pins : 3

Temperatura : Min 0 °C | Max 0 °C

Tamaño : 39 KB

Aplicación : Emitter to base voltage8V; NPN epitaxial planar transistor