Path:OKDatasheet > Datasheet Semiconductor > Hi Sincerity Datasheet > HLB124E
HLB124E especificación: Emitter to base voltage8V; NPN epitaxial planar transistor for high voltage, high speed switching inductive circuit and amplifier applications
HLB124E similares
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- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
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- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
- HLB122I
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
- HLB122J
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
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- Emitter to base voltage8V; NPN epitaxial planar transistor
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- HLB124E
- Emitter to base voltage8V; NPN epitaxial planar transistor for high voltage, high speed switching inductive circuit and amplifier applications
- HLB125E
- Emitter to base voltage9V; NPN epitaxial planar transistor for light applications and low switch-mode power suppies
HLB124E Datasheet y Espec
Fabricante : Hi Sincerity
Embalaje : TO-220
Pins : 3
Temperatura : Min 0 °C | Max 0 °C
Tamaño : 40 KB
Aplicación : Emitter to base voltage8V; NPN epitaxial planar transistor for high voltage, high speed switching inductive circuit and amplifier applications
HLB124E PDF Download