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0PBC ST083S08PFK2L 307UA160 SD203R04S20MSC 302UR120YPD ST330C14L1L ST280C06C1L IRU1117-33CS ST180S04M0 SD103N12S10MBC ST380CH06C1 200HF120MBV ST303C12CHK2 307U200P2 SD400R12MC IRFU9014 ST203C12CHH0L ST333C04CHK0L IRU1010-25CP ST730C18L2 IRF7663 SD453R25S30PSC IRF3315L SD203N16S10

IR Catálogo de datos-46

Parte NoFabricanteAplicación
IRG4BC20SD-S IRInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A
SD150N20PBC IRStandard recovery diode
ST083S08PFK2L IRInverter grade thyristor
307UA160 IRStandard recovery diode
SD203R04S20MSC IRFast recovery diode
302UR120YPD IRStandard recovery diode
ST330C14L1L IRPhase control thyristor
ST280C06C1L IRPhase control thyristor
IRU1117-33CS IR800mA low dropout positive fixed 3.3V regulator
ST180S04M0 IRPhase control thyristor
SD103N12S10MBC IRFast recovery diode
ST380CH06C1 IRPhase control thyristor
200HF120MBV IRStandard recovery diode
ST303C12CHK2 IRInverter grade thyristor
307U200P2 IRStandard recovery diode
SD400R12MC IRStandard recovery diode
IRFU9014 IRHEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.50 Ohm, ID = -5.1A
ST203C12CHH0L IRInverter grade thyristor
ST333C04CHK0L IRInverter grade thyristor
IRU1010-25CP IR1A low dropout positive fixed 2.5V regulator
ST730C18L2 IRPhase control thyristor
IRF7663 IRHEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.020 Ohm.
SD453R25S30PSC IRFast recovery diode
IRF3315L IRHEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A
SD203N16S10MSV IRFast recovery diode
301UA120P4 IRStandard recovery diode
300HFR40P IRStandard recovery diode
SD300N16MV IRStandard recovery diode
ST180C16C3 IRPhase control thyristor
72UF80A IRStandard recovery diode

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