Path:okDatasheet > Datasheet Semiconductor > IR Datasheet > IR-48

305UA80P4 IRFI624G SD703C16S30L ST303S08MFN0 ST180S18M0L ST1900C46R0 ST083S04PFK1 SD150N25MBC 301URA200P3 302UR120AYPD SD153N10S15PBV SD300N25MSC SD453N20S20PC IRKDL45025S20 ST300C16C0 IRGBC20K-S SD103N25S20MC ST300C12C2 IRFP064V ST2600C28R1 ST330S14M1L IRFR310 SD203R04S15MC 309U

IR Catálogo de datos-48

Parte NoFabricanteAplicación
SD200N16PSV IRStandard recovery diode
IRFU224 IRHEXFET power MOSFET. VDSS = 250V, RDS(on) = 1.1 Ohm, ID = 3.8A
305UA80P4 IRStandard recovery diode
IRFI624G IRHEXFET power MOSFET. VDSS = 250V, RDS(on) = 1.1 Ohm, ID = 3.4 A
SD703C16S30L IRFast recovery diode
ST303S08MFN0 IRInverter grade thyristor
ST180S18M0L IRPhase control thyristor
ST1900C46R0 IRPhase control thyristor
ST083S04PFK1 IRInverter grade thyristor
SD150N25MBC IRStandard recovery diode
301URA200P3 IRStandard recovery diode
302UR120AYPD IRStandard recovery diode
SD153N10S15PBV IRFast recovery diode
SD300N25MSC IRStandard recovery diode
SD453N20S20PC IRFast recovery diode
IRKDL45025S20 IRStandard diode
ST300C16C0 IRPhase control thyristor
IRGBC20K-S IRInsulated gate bipolar transistor
SD103N25S20MC IRFast recovery diode
ST300C12C2 IRPhase control thyristor
IRFP064V IRHEXFET power MOSFET. VDSS = 60V, RDS(on) = 5.5mOhm, ID = 130A
ST2600C28R1 IRPhase control thyristor
ST330S14M1L IRPhase control thyristor
IRFR310 IRHEXFET power MOSFET. VDSS = 400V, RDS(on) = 3.6 Ohm, ID = 1.7A
SD203R04S15MC IRFast recovery diode
309URA250 IRStandard recovery diode
SD400N08PBC IRStandard recovery diode
300U160PD IRStandard recovery diode
SD103R14S15MSC IRFast recovery diode
IRG4BC20KD IRInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A

<< 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 >>