Path:okDatasheet > Datasheet Semiconductor > IR Datasheet > IR-34
53N16S15MV IRFP048 SD253R04S15MV 70UR100 IRF7706 ST1200C18K0 SD253R14S20PBV 302U100A SD253R10S20MV ST110S04P1L SD103N14S15MBC 303U200P5 ST330S08M0L ST333C04LHK3 309UR80P3 300UR120APD CPV363MF SD600N25PC SD103R12S20MSC ST223C04CHK2L 70UF160YPD ST230S08P1 ST380C06C3L IRFN340 SD203N
Parte No | Fabricante | Aplicación |
---|---|---|
IRFY340CM | IR | HEXFET power mosfet |
IRC540 | IR | HEXFET power MOSFET. Continuous drain current 28A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V. Drain-to-source on-resistance 0.077Ohm |
SD253N16S15MV | IR | Fast recovery diode |
IRFP048 | IR | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.018 Ohm, ID = 70A |
SD253R04S15MV | IR | Fast recovery diode |
70UR100 | IR | Standard recovery diode |
IRF7706 | IR | HEXFET power MOSFET. VDSS = -30V, RDS(on) = 22mOhm, ID = -7.0A @ VGS = -10V. RDS(on) = 36mOhm, ID = -5.6A @ VGS = -4.5V. |
ST1200C18K0 | IR | Phase control thyristor |
SD253R14S20PBV | IR | Fast recovery diode |
302U100A | IR | Standard recovery diode |
SD253R10S20MV | IR | Fast recovery diode |
ST110S04P1L | IR | Phase control thyristor |
SD103N14S15MBC | IR | Fast recovery diode |
303U200P5 | IR | Standard recovery diode |
ST330S08M0L | IR | Phase control thyristor |
ST333C04LHK3 | IR | Inverter grade thyristor |
309UR80P3 | IR | Standard recovery diode |
300UR120APD | IR | Standard recovery diode |
CPV363MF | IR | IGBT SIP module |
SD600N25PC | IR | Standard recovery diode |
SD103R12S20MSC | IR | Fast recovery diode |
ST223C04CHK2L | IR | Inverter grade thyristor |
70UF160YPD | IR | Standard recovery diode |
ST230S08P1 | IR | Phase control thyristor |
ST380C06C3L | IR | Phase control thyristor |
IRFN340 | IR | HEXFET power mosfet |
SD203N14S10MC | IR | Fast recovery diode |
309U200P5 | IR | Standard recovery diode |
IRHN8150 | IR | HEXFET transistor |
ST300C12L1 | IR | Phase control thyristor |